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  RB521S-30 diodes schottky barrier diode RB521S-30 z applications low current rectification and high speed switching z features 1) extremely small surface mounting type. (emd2) 2) i o =200ma guaranteed despite the size. 3) low v f .( v f =0.40v typ. at 200ma ) z construction silicon epitaxial planar z z z z external dimensions (units : mm) 1.6?.1 1.2?.05 0.8?.05 cathode mark 0.6?.1 0.12?.05 rohm : emd2 eiaj : sc-79 jedec : sod-523 0.3?.05 c z z z z absolute maximum ratings (ta=25 c) parameter symbol limits unit v r 30 v dc reverse voltage i o 200 ma mean rectifying current i fsm 1a peak forward surge current ? tj 125 c junction temperature tstg ? 40~ + 125 c storage temperature ? 60hz for 1 z z z z electrical characteristics (ta=25 c) parameter forward voltage reverse current symbol min. typ. max. unit conditions v f i r ? ? ? ? 0.50 30 v a i f = 200ma v r = 10v note) sensitive product handling required.
RB521S-30 diodes z z z z electrical characteristic curves (ta=25 c) 1 10 100 1m 10m 100m 1 forward current : i f (a) forward voltage : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 c 5 2 1 = a t c 5 7 c 5 2 c 5 2 ? fig. 1 forward characteristics 10n 100n 1 10 100 1m 10m reverse current : i r (a) reverse voltage : v r (v) 0102030 ta = 125 c 75 c 25 c ? 25 c fig. 2 reverse characteristics 0 2468101214 1 2 5 10 20 50 100 f=1mhz ta=25?c reverse voltage : v r ( v) capacitance between terminals : c t ( pf) fig. 3 capacitance between terminals characteristics 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( c) fig. 4 derating curve (mounting on glass epoxy pcbs)


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